- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
0000000002000000
- More
- Availability
-
11
- Author / Contributor
- Filter by Author / Creator
-
-
Theodoropoulou, Nikoleta (2)
-
Cantrell, Samuel R (1)
-
Chen, Shuo (1)
-
Cottier, Ryan J (1)
-
Fan, Xing (1)
-
Li, Sheng (1)
-
Lindsey, Skyler (1)
-
Liu, Xiaoyuan (1)
-
Lv, Bing (1)
-
Miracle, John (1)
-
Miracle, John T (1)
-
Ni, Yizhou (1)
-
Sun, Jie (1)
-
Yu, Qingkai (1)
-
#Tyler Phillips, Kenneth E. (0)
-
#Willis, Ciara (0)
-
& Abreu-Ramos, E. D. (0)
-
& Abramson, C. I. (0)
-
& Abreu-Ramos, E. D. (0)
-
& Adams, S.G. (0)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Sahin. I. (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
We report the growth and optical characterization of single-crystal BiFe1−xMnxO3 thin films directly on SrTiO3/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO3 to 2.58 eV in BiFe0.74Mn0.26O3, consistent with previous reports on Mn-doped BiFeO3. These findings highlight the potential of BiFe1₋xMnxO3 films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications.more » « lessFree, publicly-accessible full text available May 1, 2026
-
Li, Sheng; Liu, Xiaoyuan; Fan, Xing; Ni, Yizhou; Miracle, John; Theodoropoulou, Nikoleta; Sun, Jie; Chen, Shuo; Lv, Bing; Yu, Qingkai (, Crystal Growth & Design)
An official website of the United States government
